Simulations of Proton Implantation in Silicon Carbide (SiC)
Case Western Reserve University Cleveland United States
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We report on exploratory research effort with preliminary results on investigating fundamental radiation effects in micromachined silicon carbide SiC structures and devices. In this technical digest, we briefly present a computer simulation study on the effects of implanting protons hydrogen ions, H into SiC thin layers on siliconSi substrate, and explore the ion implantation conditions that are relevant to experimental radiation of SiC layers.
- Electrical and Electronic Equipment