Accession Number:

AD1025395

Title:

Simulations of Proton Implantation in Silicon Carbide (SiC)

Descriptive Note:

Conference Paper

Corporate Author:

Case Western Reserve University Cleveland United States

Report Date:

2016-03-31

Pagination or Media Count:

3.0

Abstract:

We report on exploratory research effort with preliminary results on investigating fundamental radiation effects in micromachined silicon carbide SiC structures and devices. In this technical digest, we briefly present a computer simulation study on the effects of implanting protons hydrogen ions, H into SiC thin layers on siliconSi substrate, and explore the ion implantation conditions that are relevant to experimental radiation of SiC layers.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE