GaN on Diamond with Ultra-Low Thermal Barrier Resistance
Qorvo Inc. Richardson United States
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We investigated the effective thermal boundary resistance TBReff of GaN-on-Diamond interfaces for diamond growth with a 5nm SiNx, a 5nm AlN interfacial layer, or without any interfacial layers, respectively. It was found that the SiNx interfacial layers resulted in smooth and sharp interfaces, but direct growth of diamond on GaN exhibited very rough interfaces. TBReff is strongly correlated with interface quality. With an approximately 5nm SiNx interfacial layer, aTBReff as low as 2.5 m2kGW was achieved, which is more than five times better than the previously reported best data, and close to the limit predicted by theoretical models for GaN-diamond interfaces.