Accession Number:

AD1025279

Title:

Novel Si-Ge-C Superlattices for "More than Moore" CMOS

Descriptive Note:

Conference Paper

Corporate Author:

Quantum Semiconductor LLC San Jose United States

Report Date:

2016-03-31

Pagination or Media Count:

4.0

Abstract:

The search for Silicon-based direct band-gap semiconductors is more relevant than ever for More than Moore CMOS. Monolithically-integrated novel crystalline materials are key to enabling increased performance and new functionalities, such as efficient light absorption and emission. Si-Ge-C SuperLattices 1 are highly ordered synthetic crystals having direct band-gaps and large oscillator strengths. This paper will present ongoing research in simulation and epitaxial growth.

Subject Categories:

  • Crystallography
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE