Characterization of an Mg-implanted GaN p-i-n Diode
Naval Research Laboratory Washington United States
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A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.
- Solid State Physics
- Inorganic Chemistry
- Electrical and Electronic Equipment