Accession Number:

AD1024731

Title:

Characterization of an Mg-implanted GaN p-i-n Diode

Descriptive Note:

Conference Paper

Corporate Author:

Naval Research Laboratory Washington United States

Report Date:

2016-03-31

Pagination or Media Count:

3.0

Abstract:

A p-i-n diode formed by the implantation of Mg in GaN was fabricated and characterized. After implantation, Mg was activated using the symmetrical multicycle rapid thermal annealing technique with heating pulses up to 1340C. The Mg-implanted p-i-n diode exhibits rectification and low leakage currents. The realization of an Mg-implanted GaN device is a key step for future power electronic devices.

Subject Categories:

  • Solid State Physics
  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE