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Rare-Earth Ions in Niobium-Based Devices as a Quantum Memory: Magneto-Optical Effects on Room Temperature Electrical Transport

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Technical Report

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Space and Naval Warfare Systems Center Pacific San Diego United States

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Rare-earth ions are useful for the implementation of quantum memory. In particular, the energy levels and magneticspin properties of select ions may enable storage of quantum states. Also, the optical activity may enable optical read-out techniques and optical transmission of qubit states. In addition, the energy levels of ions can be used for designing superconducting qubits where the ionic configuration tunes the Hamiltonian for quantum computing. In the more near term, ions embedded in superconductor heterostructure can be used to implement cryogenic memory for superconducting digital computing. Our concept involves embedding rare-earth ions in superconductor devices to provide a low dissipation environment and access to the systems Hamiltonian. In this report we show results and success in integrating rare-earth neodymium by ion implantation in thin films of niobium and niobium-based heterostructure devices. We model the ion implantation process and confirm the concentration of the neodymium in niobium by energy dispersive X-ray EDX spectroscopy in a scanning electron microscope SEM. We study the effect of optical illumination and magnetic stimulus on the transport of the devices at room temperature, as it is important to understand the films and devices so they can properly designed and optimized for utility as quantum memory. We find that the magnetic field has a strong effect on the response. We also find that the selectivity in the optical effect when using a broadband halogen lamp in comparison to a light emitting diode LED with selectivity in the excitation wavelength, reinforces the role of the magnetic and optically active Nd rare-earth ions on the device response.

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  • Solid State Physics

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