Accession Number:

AD1023462

Title:

Artificial Oxide Heterostructures with Tunable Band Gap

Descriptive Note:

Technical Report,15 Mar 2013,14 Aug 2016

Corporate Author:

Temple University of the Commonwealth System of Higher Education Philadelphia United States

Personal Author(s):

• Wu,Xifan

Report Date:

2016-12-20

Pagination or Media Count:

11.0

Abstract:

We have performed the joint experimental and theoretical studies towards the realization of tunable band-gap in artificial oxide multiferroic thin-films and heterostructures under epitaxial strain. In multiferroic oxides, the magnetic exchange interaction is crucially dependent on the hybridization between the magnetic cation and its surrounding oxygen cage. The above is an valence and conduction bands, as well as the band gap. In addition, the magnetic interaction can be also strongly coupled to the ferroelectric polar distortion through the metal-oxygen bonding angles and lengths. By using the coupling between magnetic and the ferroelectric orderings, the band structure, gap as well as the magnetic properties can be tuned by the epitaxial strain. We showed the tunable optical dielectric functions from the surface reconstruction and the epitaxial strain in CaMnO3 films by epitaxial growth. We also demonstrated that the functional properties inhexagonal LuFeO3 have its electronic and structural origins and can be tuned by epitaxial strain. Finally, we also proposed new design rule for room temperature artificial perovskite superlattice, which is closed related with the current topic.

Descriptors:

• band gaps
• thin films
• physical properties
• energy bands
• band structures
• materials science

Subject Categories:

• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE