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Quantum Transport and Optoelectronics in Gapped Graphene Nanodevices

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Technical Report,01 Aug 2011,31 Jul 2016

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Massachusetts Institute of Technology Cambridge United States

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The research objective of this proposal is to investigate the quantum electronic and optoelectronic properties of graphene-based semiconducting nanodevices. To achieve this we will combine optoelectronic and plasmonic device structures with atomically seamless electrical contacts. The devices will be based on fully band gap engineered bilayer graphene and graphene nanoribbons, resulting in all-carbon nanoelectronic devices with optoelectronic properties and functionalities such as temporally and spatially tunable band gap energies not possible with conventional materials. Importantly, this device technology will be developed using hexagonal boron nitride as a dielectric, which has been demonstrated to vastly improve the electronic properties of substrate-supported graphene and is already under investigation in the Jarillo-Herrero group. The electronic device structures described in this proposal will demonstrate the powerful role graphene can play in practical high-technology applications since we will be directly measuring high-speed Zener diodes and PN junctions, as well as FET and band-engineered 1D tunneling transistors. These device structures may operate at unprecedented speeds and with tremendous efficiency, both of which are vital for aeronautic and defense technologies.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Quantum Theory and Relativity

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