SiC/GaN Based Optically Triggered MESFET for High Power Efficiency and High Radiation Resistance Solid State Switch Application for Actuator System
Technical Report,24 Feb 2012,29 Feb 2016
California State University - Northridge Northridge United States
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During 2012-2013, some analytical models have been developed and the results were inputted to the Synopsys Sentaurus TCAD. Thedevice structure and dimension were optimized and the device performance was tested for conductive substrate and semi-insulatingsubstrate. The wafer specification and mask layout were prepared by the combination of Synopsys Sentaurus TCAD and analyticalmodeling. In 2014, high quality oxide development has been obtained by the combination of thermal oxidation and sputtering oxidedeposition and the research work has outstanding merit as indicated by two peer reviewed publications in reputed journals. In 2015, theimpurity profile for source and drain and junction depth has been designed and nitrogen ion implantation has been performed followed byhigh temperature annealing. In 2016, the device electrical isolation has been performed using high energy Argon with high ion dose tocreate high resistivity amorphous barrier surrounding the active device area. Ohmic contact by nickel deposition and ITO Schottky contactby bi-layer lift-off process has been established. I-V characteristics of the fabricated SiC MESFET have been obtained by curve tracershowing clear indication of linear and non-linear properties with DIBL effects and process induced defects. Threshold voltage,transconductance and pinch-off voltage have been determined.