Accession Number:

AD1017635

Title:

Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

Descriptive Note:

Technical Report

Corporate Author:

Sensors Electron and Devices Directorate, US Army Research Laboratory Adelphi

Report Date:

2016-09-01

Pagination or Media Count:

16.0

Abstract:

Thin layers of single-crystal, epitaxial semiconductor tin alpha-Sn were grown by molecular beam epitaxy MBE on cadmium telluride CdTe substrates. X-ray diffraction and Raman scattering measurements confirm that the thin layers of alpha-Sn are slightly strained, which supports theoretical prediction that alpha-Sn is a 3-D topological insulator TI. Future studies will aim at the growth of alpha-Sn with improved transport characteristics using high-quality CdTe buffer layers, studies of the 3-D TI characteristics of alpha-Sn, and the MBE growth of stanene.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE