Accession Number:
AD1017635
Title:
Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin
Descriptive Note:
Technical Report
Corporate Author:
Sensors Electron and Devices Directorate, US Army Research Laboratory Adelphi
Personal Author(s):
Report Date:
2016-09-01
Pagination or Media Count:
16.0
Abstract:
Thin layers of single-crystal, epitaxial semiconductor tin alpha-Sn were grown by molecular beam epitaxy MBE on cadmium telluride CdTe substrates. X-ray diffraction and Raman scattering measurements confirm that the thin layers of alpha-Sn are slightly strained, which supports theoretical prediction that alpha-Sn is a 3-D topological insulator TI. Future studies will aim at the growth of alpha-Sn with improved transport characteristics using high-quality CdTe buffer layers, studies of the 3-D TI characteristics of alpha-Sn, and the MBE growth of stanene.