Alternative Solder Bond Packaging Approach for High-Voltage (HV) Pulsed Power Devices
US Army Research Laboratory Adelphi United States
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The silicon carbide SiC super gate-turn-off thyristor SGTO device is a superior switching component of interest to the US Army for various pulsed power applications. This research presents a modified power packaging approach for enhancing a pulsed power devices reliability and performance under extreme pulsed switching conditions critical to Army-specific applications. The power package implemented on the SiC SGTO is solder-based, which mitigates the mechanical strain on the die surface metallization. This packaging design eliminates wire bonds on the anode area of the SiC SGTO, which reduces total stray inductance and the total on-resistance of the packaged SiC SGTO device. This report details the optimized pulsed power packaging approach and the pulse evaluation circuit used to evaluate a SiC SGTO device under extreme pulsed current switching conditions.