Accession Number:

AD1017480

Title:

Doped Aluminum Gallium Arsenide (AlGaAs)/Gallium Arsenide (GaAs) Photoconductive Semiconductor Switch (PCSS) Fabrication

Descriptive Note:

Technical Report,01 Jan 2016,30 Sep 2016

Corporate Author:

US Army Research Laboratory Adelphi United States

Personal Author(s):

Report Date:

2016-09-27

Pagination or Media Count:

34.0

Abstract:

The fabrication and packaging of doped gallium arsenide GaAs photoconductive semiconductor switches with aluminum gallium arsenide AlGaAs capping layers are presented. The dopant-diffused contact regions and epitaxial capping layer are fabricated to investigate the advantages of both approaches. Devices were fabricated with various doping region device combinations intrinsic, pn, nn, and pp to determine whether there is a device performance or processing freedom advantage to any of these cases.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE