Accession Number:

AD1017406

Title:

Erbium Doped GaN Lasers by Optical Pumping

Descriptive Note:

Technical Report,27 Oct 2014,26 Oct 2015

Corporate Author:

Texas Technical University Lubbock United States

Personal Author(s):

• Lin,Jingyu
• Jiang,Hongxing

Report Date:

2016-07-13

Pagination or Media Count:

9.0

Abstract:

This main objective of this project is to construct an optical pump system, which would allow us to carry out optical studies of ErGaN materials under 980 nm resonant excitation. The results obtained from the optically pumped studies will be utilized to guide crystal growth and laser design. During the supporting period, we have accomplished the following tasks Successfully completely the installation of a high power 980 laser. The system is dedicated to the studies of the optical and lasing properties of ErGaN crystals. Successfully attained for the first time freestanding ErGaN wafers of 2-inches in diameter with a thickness on the millimeter scale. These freestanding wafers were obtained via growth by hydride vapor phase epitaxy HVPE in conjunction with a laser-lift-off LLO process. An Er doping level of 1.4 1020 atomscm3 has been confirmed by secondary ion mass spectrometry measurement. Carried out optical studies of ErGaN under 980 nm optical pumping.

Descriptors:

• high energy lasers
• Optical pumping
• mass spectrometry
• optical absorption
• vapor phases
• crystal growth
• emission spectra
• excitation
• doping
• gallium nitrides
• Erbium

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE