Accession Number:

AD1016897

Title:

Design and Fabrication of InN Nanowire Photodiode Detectors for SWIR

Descriptive Note:

Technical Report

Corporate Author:

Defence Research and Development Canada Ottawa, Ontario Canada

Personal Author(s):

Report Date:

2013-12-13

Pagination or Media Count:

7.0

Abstract:

This scientific letter gives the status regarding the project 06cd19 to support CANSOFCOM. Cameras have, at their heart, photo detectors. The latter are made of materials that are sensitive to a specific wavelength band, such as visible, UV, short wave infrared SWIR, etc. The efficiency of detecting incoming photons and convert them into information to perform imagery is a constant challenge and command to search for new materials to be used as detectors. Among these, InN nanowires were presented by McGill University as promising because InN can respond to a much wider wavelength range than conventional material such as InGaAs. Moreover, InN nanowires are grown directly on Si substrates and can be readily integrated with Si electronics on the same chip, which would reduce the integration cost by a factor of three to five.

Subject Categories:

  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE