Accession Number:



Research Area 4: Electronics: A Special Event at the International Conference on Molecular Beam Epitaxy

Descriptive Note:

[Technical Report, Final Report]

Corporate Author:

Arizona State University

Personal Author(s):

Report Date:


Pagination or Media Count:



The International Conference on Molecular Beam Epitaxy Flagstaff, Arizona, September 7-12, 2014 provided an international forum for the latest research in the area of molecular beam epitaxy MBE, including the fundamentals of MBE, the latest developments in III-V, II-VI, IV-VI, and IV semiconductors, oxides, nitrides, and wide gap materials, nanowires, quantum dots, spintronics, emerging materials, heterogeneous epitaxy, devices, and production MBE. The conference included 432 attendees from 24 countries and a contributed technical program with 90 oral presentations and 143 poster presentations, with more than 60 of the contributed presentations given by students. The proceedings are published in the internationally renowned Journal of Crystal Growth, volume 425, pages 1-400 2015. In addition, there were 3 plenary talks, 16 invited presentations, 26 vendor exhibits, and a one day special symposium Meeting with MBE PioneersSunday, September 7, 2014 that vividly delivered the legendary history of some of the most prominent MBE pioneers, capturing their history and personal reflections during the development, evolution, and use of MBE. They shared their valuable experience with the community and most importantly with students and junior researchers.


Subject Categories:

  • Manufacturing and Industrial Engineering and Control of Production Systems
  • Electrical and Electronic Equipment
  • Crystallography

Distribution Statement:

[A, Approved For Public Release]