Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors
Technical Report,01 Apr 2010,31 Mar 2014
Department of Electrical Engineering, University of South Carolina Columbia United States
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Research is conducted to investigate the epitaxial growth of thick films using halogenated precursors chlorine-based dichlorosilane DCS and fluorine-based tetrafluorosilane TFS. TFS SiF4 has been utilized for the first time to completely eliminate Si droplet formation and suppress parasitic deposition, thus enabling high quality SiC growth. Ni4H-SiC Schottky diodes fabricated on TFS-grown epilayers show superior performance with high barrier heights and low ideality factors.