Accession Number:

AD1014176

Title:

Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

Descriptive Note:

Technical Report,01 Apr 2010,31 Mar 2014

Corporate Author:

Department of Electrical Engineering, University of South Carolina Columbia United States

Personal Author(s):

Report Date:

2016-08-02

Pagination or Media Count:

25.0

Abstract:

Research is conducted to investigate the epitaxial growth of thick films using halogenated precursors chlorine-based dichlorosilane DCS and fluorine-based tetrafluorosilane TFS. TFS SiF4 has been utilized for the first time to completely eliminate Si droplet formation and suppress parasitic deposition, thus enabling high quality SiC growth. Ni4H-SiC Schottky diodes fabricated on TFS-grown epilayers show superior performance with high barrier heights and low ideality factors.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE