Accession Number:



Domain Engineered Magnetoelectric Thin Films for High Sensitivity Resonant Magnetic Field Sensors

Descriptive Note:

Technical Report,01 Dec 2008,30 Dec 2011

Corporate Author:

Virginia Polytechnic Institute and State University Blacksburg United States

Personal Author(s):

Report Date:


Pagination or Media Count:



The objective of this research program was to investigate the resonance phenomenon in magnetoelectric composites and use it to design and fabricate magnetic field sensor with following characteristics i extremely high sensitivity ii low power consumption, iii operation in a wide range of frequencies, iv miniature size, v possess a mechanism to incorporate directionality, and vi capability to filter the background noise. The sensor structure consisted of ringdot electrode pattern and it utilizes the principles of a piezoelectric transformer. We designed and fabricated the magnetic field sensor by combining tape-casting process and also developed the hybrid chemical solution deposition RF magnetron sputtering thin film deposition based MEMS process. Sensor design was conducted by using the piezoelectric equivalent circuit models. The investigations focused on understanding of the growth and microstructure of the ferroelectric thin film on silicon substrate, non-destructive composition analysis of the thin film, synthesis of textured film, effect of piezoelectric vibration mode on the magnitude of converse magnetoelectric effect, variation in the magnitude of ME coupling with DC bias, and effect of microstructure and domain structure on the sensitivity.

Subject Categories:

Distribution Statement: