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Manipulating the Interfacial Electrical and Optical Properties of Dissimilar Materials with Metallic Nanostructures

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Technical Report,01 May 2010,30 Apr 2016

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The University of Texas at Austin Austin United States

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The future of AF sensing is multi-modal imaging sensors that vertically integrate an ever increasing diversity of modes wavelength bands,polarization states, phase, etc. onto each pixel. A fundamental challenge is manipulating the electrical and optical properties at the interface ofdissimilar materials. We sought to address the traditional challenges associated with this need via the integration of precisely controlled semimetallic nanostructures with III-V semiconductors, using ErAs and related materials as the metals. Our approach began with coupling these metallic nanostructures with growth on patterned templates. We developed a patterningregrowth process and characterized the deposition of ErAs on a variety of template surfaces using a variety of electrical, optical, structural, and chemically-sensitive techniques. We also examined the optical quality of III-V layers grown above ErAs nanostructures, which is critical for future device applications, and developed a method to achieve optical quality within 80-95 of nominally-identical Er-free structures.

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