Self Consistent Ambipolar Transport and High Frequency Oscillatory Transient in Graphene Electronics
Technical Report,01 Oct 2011,30 Jun 2015
University of Illinois - Urbana Champaign United States
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This research was theoretical in nature and explored the possibilities of achieving THZ current oscillations in single layer graphene devices. The basic mechanism relies on quasi-ballistic acceleration of free carriers in constant electric fields followed by sudden LO phonon emission, where carriers lose the quasi-totality of their kinetic energy to repeat the succession of acceleration and LO phonon emission. Our study showed that in the presence of an ac field, THz oscillations exhibit soft resonances at a frequency roughly equal to half of the inverse of the carrier transit time to the LO phonon energy. It also showed that in the presence of low energy i.e. lower than the LO phonon spatial and time varying periodic scattering, the current oscillations exhibit resonances for the higher harmonics of the scattering periodicity, which gives access to a wide range of THz frequencies for potential applications in detectors as well as emitters.
- Electrical and Electronic Equipment
- Electricity and Magnetism