Accession Number:



Ultra Low Noise Infrared Detector Amplifier for Next Generation Standoff Detector

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STTR Report,24 Sep 2009,24 Sep 2011

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EPIR Technologies Inc Bolingbrook United States

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A wideband ultralow-noise amplifier LNA for standoff detection applications employing a commercial 0.15 mum PHEMT active device anda feedforward noise cancellation technique has been developed. The technology used is based on the 0.15-mum pHEMT 3MI TriQuint powerprocess. The amplifier has a die surface of 1 mm by 2 mm and a gain that exceeds 17 dB between 200 MHz and 2.25 GHz. The matching atboth input and output is better than -10 dB. The measured noise figure at room temperature is 1.1 dB at 700 MHz and 1.2 dB at 1.5 GHz.The measured P1dB and Psat at room temperature are about 7 dBm and 10 dBm, respectively. At room temperature, the LNA draws 37 mAat 3 V voltage. We further characterized the LNA at cryogenic temperatures in terms of gain, inputoutput match and noise figure. The measured results showed an improvement of approximately 0.9 dB in noise figure across the band. At cryogenic temperatures, the gain variation is approximately 1.5 dB, while the inputoutput match fluctuated without any disruption in the LNA behavior. This LNA is intended for use in applications requiring a combination of low noise and low operating temperatures.

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