Tunable High Pulse Energy Ultrafast Laser
Technical Report,15 Aug 2014,14 Aug 2015
Vanderbilt University Nashville United States
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In this final report we discuss the acquisition and set up of the newly acquired high power ultrafast laser system and outline our research plans using the system. The first research area covers coherent acoustic phonon CAP spectroscopy of 4H silicon carbide SiC crystals. We will expand our present work on SiC to examine how an ion implantation process modifies the acousto-optical structure. The emphasis of our research remains on phenomena and processes far from equilibrium. In the second research project we intend to study transient and permanent material modification at a specified depth in semiconductors caused by a spike of localized, high density excited carriers due to coupling between photons and coherent acoustic phonons. These studies are based on the recognition that the semiconductor band gap is transiently narrowed by the CAP wave allowing localized electronic excitation at a desired depth by properly timed laser pulses of appropriate energies. In the third area of our research, we plan to explore and develop low-temperature diamond growth process assisted by ultrafast, high-power laser pulses. Our preliminary results are very promising and show that the pretreatment of substrates with ultrafast laser radiation improves the diamond growth significantly.
- Lasers and Masers