Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth
Technical Report,01 Jun 2015,31 Aug 2015
US Army Research Laboratory Adelphi United States
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Co-sputtered copper Cu-nickel Ni alloys with layered thin-film ratios of 61, 41, and 31 were developed for use as a catalyst for the growth of graphene. A design of experiments was initiated with 3 tasks to complete 1 metal preparation designed to achieve preferred 111 oriented films, 2 alloying of the layered films, and 3 the synthesis of AB-stacked quality bilayer graphene via low-pressure chemical vapor deposition LPCVD. This report covers the analysis of the first 2 tasks by revealing the detailed morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen H2argon Ar gas ratio, and pressure. These variables are expected to have a major impact on the growth of graphene for different Cu-Ni thin-film concentrations.