Accession Number:

AD1007860

Title:

Sulfur Doping of InAs

Descriptive Note:

Technical Report,15 Oct 2013,14 Jul 2014

Corporate Author:

University of Texas at Austin Austin United States

Personal Author(s):

Report Date:

2015-06-04

Pagination or Media Count:

15.0

Abstract:

We investigated the sulfur doping limits of InAs using ion implantation and rapid thermal annealing for plasmonic applications. Previous studies suggested that higher electron concentrations would be possible using sulfur doping than silicon, which represents the current state-of-the-art dopant. While we achieved near record active electron concentrations with sulfur, we found that dopant diffusion ultimately limited the maximum achievable carrier concentration.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE