Sulfur Doping of InAs
Technical Report,15 Oct 2013,14 Jul 2014
University of Texas at Austin Austin United States
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We investigated the sulfur doping limits of InAs using ion implantation and rapid thermal annealing for plasmonic applications. Previous studies suggested that higher electron concentrations would be possible using sulfur doping than silicon, which represents the current state-of-the-art dopant. While we achieved near record active electron concentrations with sulfur, we found that dopant diffusion ultimately limited the maximum achievable carrier concentration.
- Solid State Physics