Accession Number:

AD1007707

Title:

Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

Descriptive Note:

Technical Report,13 Sep 2012,11 Sep 2015

Corporate Author:

State Scientific Research Institute Vilnius Lithuania

Personal Author(s):

Report Date:

2016-04-01

Pagination or Media Count:

43.0

Abstract:

This was a study of hot-electron transport, noise, and energy relaxation for doped zinc-oxide and structured ZnO transistor materials with a 2-D electron gas 2DEG channel subjected to a strong electric field. We conclude that the ZnO 3DEG and 2DEG channels can be operated at the electron density window with better performance than at the off-window electron densities. Models based on the Boltzmann kinetic equation for hot electrons fail to interpret the experimental results unless hot-phonon accumulation is taken into account assumption of electron density-independent hot-phonon lifetimes explains the transition of the hot electron-hot phonon system from weak to intense coupling but fails to predict window position.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE