ErAs Epitaxial Ohmic Contacts to InGaAs/InP
Journal Article - Open Access
University of California, Santa Barbara Santa Barbara United States
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We report epitaxial ErAs semimetal Ohmic contacts onto n-type In0.53Ga0.47As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAsInGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5 - 0.4 omega mum2 horizontal specific contact resistivity PH, 4.20 omega mum for the ErAsInAsInGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.
- Electrical and Electronic Equipment