Accession Number:

AD1005629

Title:

Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

Descriptive Note:

Technical Report,01 Oct 2015,01 Jan 2016

Corporate Author:

US Army Research Laboratory Adelphi United States

Personal Author(s):

Report Date:

2016-03-01

Pagination or Media Count:

16.0

Abstract:

Microwave integrated circuits are essential for wireless communication and networking systems. At the high frequencies of approximately 30 to 45 GHz, monolithic microwave integrated circuits MMICs are essential for compact hand-held satellite communications systems that provide instant, secure data and voice links in remote global regions. Small, efficient electronic components are needed for these, often battery powered, communications systems. The US Army Research Laboratory has designed several high-performance circuits and submitted them to fabrication using a prerelease research 0.09-m gallium nitride GaN process under a cooperative research agreement with Qorvo. GaN integrated circuits have significantly increased power densities for MMICs over previous technologies, such as gallium arsenide and other IIIV devices. GaN devices also offer high-power survivability and robust performance for low noise receivers.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE