High Power Microwave Interference Effects on Analog and Digital Circuits in IC's
University of Maryland College Park United States
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Microwave or electromagnetic interference EMI can couple into electronic circuits and systems intentionally from high power microwave HPM sources or unintentionally due to the proximity to general electromagnetic EM environments, and cause soft reversible upsets and hard irreversible failures. As scaling-down of device feature size and bias voltage progresses, the circuits and systems become more susceptible to the interference. Thus, even low power interference can disrupt the operation of the circuits and systems. Furthermore, it is reported that even electronic systems under high level of shielding can be upset by intentional electromagnetic interference IEMI, which has been drawing a great deal of concern from both the civil and military communities, but little has been done in terms of systematic study and investigation of these effects on IC circuits and devices. We have investigated the effects of high power microwave interference on three levels, a on fundamental single MOSFET devices, b on basic CMOS IC inverters and cascaded inverters, and c on a representative large IC timer circuit for automotive applications. We have studied and identified the most vulnerable static and dynamic parameters of operation related to device upsets. Fundamental upset mechanisms in MOSFETs and CMOS inverters and their relation to the characteristics of microwave interference power, frequency, width, and period and the device properties such as size, mobility, dopant concentration, and contact resistances, were investigated. Critical upsets in n-channel MOSFET devices resulting in loss of amplifier characteristics, were identified for the power levels above 10dBm in the frequency range between 1 and 20 GHz. We have found that microwave interference induced excess charges are responsible for the upsets.
- Electrical and Electronic Equipment
- Radiofrequency Wave Propagation