Accession Number:

AD1005500

Title:

Nitrogen Plasma Optimization for High-Quality Dilute Nitrides

Descriptive Note:

Journal Article

Corporate Author:

Stanford University Stanford United States

Report Date:

2005-02-01

Pagination or Media Count:

5.0

Abstract:

Growth of GaInNAs by molecular beam epitaxy MBE generally requires a nitrogen plasma, which complicates growth and can damage the wafer surface. Optical spectra from both ends of the plasma cell were nearly identical, and were found to be insensitive to certain changes in the cell condition evidenced by a change in reflected RF power and stability. A slight amount of excess capacitance in the matching network improved stability, particularly while the cell warmed up. Furthermore, despite steps to reduce the ion flux from the plasma, a remote Langmuir probe showed significant ions. Moderate voltages on deflection plates were sufficient to remove these ions, with a 35 increase in photoluminescence resulting from 1840V deflection.

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE