Accession Number:

AD1005416

Title:

Low-Threshold Continuous-Wave 1.5 Micron GaInNAsSb Lasers Grown on GaAs

Descriptive Note:

Journal Article - Open Access

Corporate Author:

Stanford University Stanford United States

Report Date:

2004-06-01

Pagination or Media Count:

9.0

Abstract:

We present the first continuous-wave CWedge-emitting lasers at 1.5 m grown on GaAs by molecular beam epitaxy MBE. These single quantum well QW devices show dramatic improvement in all areas of device performance as compared to previous reports. CW output powers as high as140 mW both facets were obtained from 20 m 2450 m ridge-waveguide lasers possessing a threshold current density of1.06 kAcm2, external quantum efficiency of 31 , and characteristic temperature 0 of 139 K from 10 C60 C. The lasing wavelength shifted 0.58 nmK, resulting in CW laser action at1.52 m at 70 C. This is the first report of CW GaAs-based laser operation beyond 1.5 m. Evidence of Auger recombination and intervalence band absorption was found over the range of operation and prevented CW operation above 70 C. Maximum CW output power was limited by insufficient thermal heat sinking however, devices with a highly reflective HR coating applied to one facet produced 707 mW of pulsed output power limited by the laser driver. Similar CW output powers are expected with more sophisticated packaging and further optimization of the gain region. It is expected that such lasers will find application in next-generation optical networks as pump lasers for Ramanamplifiers or doped fiber amplifiers, and could displace InP-basedlasers for applications from 1.2 to 1.6 m.

Subject Categories:

  • Lasers and Masers
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE