Accession Number:

AD1004620

Title:

The Effects of Postprocessing on Physical and Solution Deposition of Complex Oxide Thin Films for Tunable Applications

Descriptive Note:

Technical Report,01 May 2014,01 Jun 2015

Corporate Author:

US Army Research Laboratory Aberdeen Proving Ground United States

Report Date:

2016-02-01

Pagination or Media Count:

20.0

Abstract:

Thin barium strontium titanate BST films are being developed as dielectric film for use in tunable radio frequency RFmicrowave applications. Thin BST film capacitor devices were fabricated using physical and chemical solution deposition techniques. The typical dielectric constant of the physical deposition via RF magnetron sputtering film capacitors was in the range of 480780 and had dissipation factors between 0.01 to 0.06 with conventional annealing. After the effect of postamalgamate processing technique via photon ultraviolet UV irradiation annealing, these losses showed further improvement. In addition, BST films processed via solution metal organic spin deposition, which yield a lower dielectric range of 150335, also showed improved loss with UV processing from 0.014 to 0.010 while effectively maintaining desirable electrical properties. The dielectric properties of these films had little dependence on frequencies from 100 KHz to 1 MHz. The physical properties revealed that the thin films are crystalline with no evidence of any secondary phases.

Subject Categories:

  • Solid State Physics
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE