Accession Number:

AD1004413

Title:

Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

Descriptive Note:

Journal Article

Corporate Author:

National Institute of Standards and Technology Boulder United States

Report Date:

2016-03-30

Pagination or Media Count:

20.0

Abstract:

We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium Re base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminum Al oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al2O3 junction may open a new venue for coherent quantum devices.

Descriptors:

Subject Categories:

Distribution Statement:

APPROVED FOR PUBLIC RELEASE