Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics
Technical Report,01 Jun 2012,31 Jul 2015
Harvard University Cambridge United States
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The electronic properties of thin film correlated oxides was investigated via electrical transport measurements and electronic structure studies. Microscopic connection between insulatormetal switching, orbital occupancy, electronphonon interactions was emphasized. The response of correlated oxides to strong electric fields and their dynamics was investigated. A few different oxide systems were considered during the course of the study they include VO2, SmNiO3, andNbO2. The common aspects of these materials include their thermal insulatormetal transition.
- Inorganic Chemistry
- Electrical and Electronic Equipment