Accession Number:

AD1000662

Title:

Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

Descriptive Note:

Technical Report,01 Jun 2012,31 Jul 2015

Corporate Author:

Harvard University Cambridge United States

Personal Author(s):

Report Date:

2015-11-19

Pagination or Media Count:

17.0

Abstract:

The electronic properties of thin film correlated oxides was investigated via electrical transport measurements and electronic structure studies. Microscopic connection between insulatormetal switching, orbital occupancy, electronphonon interactions was emphasized. The response of correlated oxides to strong electric fields and their dynamics was investigated. A few different oxide systems were considered during the course of the study they include VO2, SmNiO3, andNbO2. The common aspects of these materials include their thermal insulatormetal transition.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE