Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices
Technical Report,01 May 2014,01 Oct 2014
ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD ABERDEEN PROVING GROUND
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An introductory overview of commonly employed deposition methods for strontium titanate STO thin films with previously achieved dielectric properties is presented. For the US Army Research Laboratorys Gen 2 complex oxide metal organic chemical vapor deposition MOCVD system, STO thin films were grown on a platinized silicon substrate, PtTiO2SiO2Si, or PtSi. All STO films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy. Studies of mass flow rates and total gas flow rates were performed to investigate their respective roles in the resulting STO film characteristics. Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD hardware and growth parameter modifications. Optimized STO films had a tunability of 20, a dielectric constant of 200, and loss tangent of less than 1 at 100 kHz.