Accession Number:

AD0919977

Title:

High Quantum Efficiency Silicon Photocathodes and TSEM Layers.

Descriptive Note:

Final rept. Jun 71-Apr 73,

Corporate Author:

GENERAL ELECTRIC CO SYRACUSE NY IMAGING DEVICES OPERATION

Personal Author(s):

Report Date:

1973-04-01

Pagination or Media Count:

62.0

Abstract:

The original objective of the program described in this report was to develop a high quantum efficiency silicon semi-transparent transmission, secondary electron multiplier TSEM in a simple image tube containing a photocathode, TSEM and a phosphor screen. Tube design and construction was performed at General Electric Imaging Devices Operation at Syracuse, while the applied research and advanced development of TSEM layers was done at the General Electric Research and Development Center. During the work on the program, it became apparent that the high dark current concomitant with the activation of silicon NEA surfaces, made it unsuitable for room temperature devices. The program scope was modified by shifting its emphasis to GaAs. Processes for polishing, thinning, handling and activating GaAs membranes were developed. The report is organized into two sections, one on work done with silicon TSEM layers, and the second on work done on GaAs TSEM layers. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE