Accession Number:

AD0918668

Title:

Gallium Arsenide Digital Integrated Circuits.

Descriptive Note:

Interim technical rept. 19 Mar-31 Dec 73,

Corporate Author:

HEWLETT-PACKARD LABS PALO ALTO CA

Personal Author(s):

• Van Tuyl, Rory L.
• Liechti, Charles A.

Report Date:

1974-03-01

Pagination or Media Count:

61.0

Abstract:

This report describes the results of Phase I of the Gallium Arsenide Digital Integrated Circuits program, which was intended to demonstrate the feasibility of fabricating digital circuits with GaAs metal-semiconductor field-effect transistor MESFET technology. Dc, RF and switching parameters of the GaAs MESFET were characterized, a large-signal nonlinear device model developed and verified with the characterization data and a MESFET logic gate fabricated. The logic gate exhibited a propagation delay of 60 ps plus 15 ps per output load and a useful bandwidth of 3-4 GHz. Based on these experimental results, it is predicted that practical medium-scale logic systems with 2-3 GHz clock rates will be possible. Progress in the development of a MESFET process with self-aligned gate is reported. Author

Descriptors:

• (*INTEGRATED CIRCUITS
• GALLIUM ARSENIDES)
• FIELD EFFECT TRANSISTORS
• SEMICONDUCTOR DEVICES
• SOLID STATE ELECTRONICS
• GATES(CIRCUITS)
• LOGIC CIRCUITS
• DIRECT CURRENT
• RADIOFREQUENCY
• ELECTRONIC SWITCHES
• FABRICATION
• MODELS
• BANDWIDTH
• NONLINEAR SYSTEMS
• RELAXATION OSCILLATORS
• SUBSTRATES
• SCHOTTKY BARRIER DEVICES
• ELECTRONIC SWITCHING
• DIGITAL SYSTEMS
• FEASIBILITY STUDIES

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE