Modulator Driver Transistor.
Final rept. 15 Jun 72-15 Dec 74,
TRW SEMICONDUCTORS LAWNDALE CA
Pagination or Media Count:
This report covers the work on Air Force Contract F33615-72-C-2092, Modulator Driver Transistor. The objective of the contract was to develop a high-speed switching transistor capable of handling one ampere of collector current. A switching transistor capable of handling 850mA of collector current with turn-on and turn-off times of 1.3 nanoseconds and 2.2 nanoseconds, respectively developed. The transistor was capable of handling one ampere of collector current, however, degradation in turn-off time resulted. The transistor utilized TRWs crossgrid structure while process development included arsenic as an emitter dopant for small base width and high emitter efficiency. Author
- Electrical and Electronic Equipment