Accession Number:

AD0917847

Title:

Modulator Driver Transistor.

Descriptive Note:

Final rept. 15 Jun 72-15 Dec 74,

Corporate Author:

TRW SEMICONDUCTORS LAWNDALE CA

Personal Author(s):

• Parekh, P. C.

Report Date:

1974-03-01

Pagination or Media Count:

49.0

Abstract:

This report covers the work on Air Force Contract F33615-72-C-2092, Modulator Driver Transistor. The objective of the contract was to develop a high-speed switching transistor capable of handling one ampere of collector current. A switching transistor capable of handling 850mA of collector current with turn-on and turn-off times of 1.3 nanoseconds and 2.2 nanoseconds, respectively developed. The transistor was capable of handling one ampere of collector current, however, degradation in turn-off time resulted. The transistor utilized TRWs crossgrid structure while process development included arsenic as an emitter dopant for small base width and high emitter efficiency. Author

Descriptors:

• *TRANSISTORS)
• (*ELECTRONIC SWITCHES
• MICROWAVE EQUIPMENT
• MICROWAVE FREQUENCY
• SUBSTRATES
• ARSENIC
• METALLIZING
• METAL OXIDE SEMICONDUCTORS
• SILICON NITRIDES
• FABRICATION
• MODULATORS
• DIFFUSION
• PHOTOLITHOGRAPHY

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE