Accession Number:

AD0917252

Title:

Semiconductor-Insulator Structures for the 1- to 2-Micrometer Region

Descriptive Note:

Semiannual technical rept.

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS

Report Date:

1973-06-15

Pagination or Media Count:

45.0

Abstract:

The goal of this contract is to develop, fabricate, evaluate, and deliver to NVL thin-film structures consisting of semiconductors having band- gaps on the order of 0.7 eV and compatible insulators. The following requirements are also goals 1 high-field tunneling transport 2 semiconductor surface passivation 3 semiconductor masking for diffusion and selective etching 4 surface charge transport and 5 antireflection coatings. Activities of the program include semiconductor material preparation GaInAs, insulator preparation, and characterization by both electrical and nonelectrical techniques of semi-conductor-insulator structures. The primary semiconductor vehicles for this study have been GaSb and GaInAs, but early work was done on germanium silicon was used as a control substrate for insulator depositions throughout the program. Present plans are to concentrate for the remainder of the program on Ga0.5In0.5As, which has a 0.7-eV band-gap, and to continue to use silicon as a control substrate. The emphasis in insulator preparation has been on low-temperature processing, to prevent degradation of semiconductor properties. Three techniques are being explored reactive plasma deposition RPD which is being used to deposit AlOx, SiOx, and SiNx liquid-phase anodization for native oxides and sulfides and plasma anodization also for native insulators.

Subject Categories:

  • Electrical and Electronic Equipment
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE