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Accession Number:
AD0917252
Title:
Semiconductor-Insulator Structures for the 1- to 2-Micrometer Region
Descriptive Note:
Semiannual technical rept.
Corporate Author:
TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS
Report Date:
1973-06-15
Pagination or Media Count:
45.0
Abstract:
The goal of this contract is to develop, fabricate, evaluate, and deliver to NVL thin-film structures consisting of semiconductors having band- gaps on the order of 0.7 eV and compatible insulators. The following requirements are also goals 1 high-field tunneling transport 2 semiconductor surface passivation 3 semiconductor masking for diffusion and selective etching 4 surface charge transport and 5 antireflection coatings. Activities of the program include semiconductor material preparation GaInAs, insulator preparation, and characterization by both electrical and nonelectrical techniques of semi-conductor-insulator structures. The primary semiconductor vehicles for this study have been GaSb and GaInAs, but early work was done on germanium silicon was used as a control substrate for insulator depositions throughout the program. Present plans are to concentrate for the remainder of the program on Ga0.5In0.5As, which has a 0.7-eV band-gap, and to continue to use silicon as a control substrate. The emphasis in insulator preparation has been on low-temperature processing, to prevent degradation of semiconductor properties. Three techniques are being explored reactive plasma deposition RPD which is being used to deposit AlOx, SiOx, and SiNx liquid-phase anodization for native oxides and sulfides and plasma anodization also for native insulators.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE
