Accession Number:

AD0912530

Title:

Semiconductor Vulnerability. Volume II. Experimental Threshold Failure Levels of Selected Diodes and Transistors, Phase III.

Descriptive Note:

Technical rept. Jun 69-Aug 70,

Corporate Author:

BRADDOCK DUNN AND MCDONALD INC ALBUQUERQUE N MEX

Report Date:

1973-07-01

Pagination or Media Count:

143.0

Abstract:

This report presents, for a selected group of semiconductor devices, pulse-power burn-out data sufficient to establish failure threshold curves. The failure curves were obtained from the experimental failure data using previously developed device failure models. This work is an extension and experimental corroboration of estimated pulse power failure levels obtained from two simple failure models which make use of device handbook parameters. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE