Accession Number:
AD0912530
Title:
Semiconductor Vulnerability. Volume II. Experimental Threshold Failure Levels of Selected Diodes and Transistors, Phase III.
Descriptive Note:
Technical rept. Jun 69-Aug 70,
Corporate Author:
BRADDOCK DUNN AND MCDONALD INC ALBUQUERQUE N MEX
Personal Author(s):
Report Date:
1973-07-01
Pagination or Media Count:
143.0
Abstract:
This report presents, for a selected group of semiconductor devices, pulse-power burn-out data sufficient to establish failure threshold curves. The failure curves were obtained from the experimental failure data using previously developed device failure models. This work is an extension and experimental corroboration of estimated pulse power failure levels obtained from two simple failure models which make use of device handbook parameters. Author
Descriptors:
- *SEMICONDUCTOR DIODES
- *TRANSISTORS
- VULNERABILITY
- VULNERABILITY
- SEMICONDUCTORS
- FAILURE(ELECTRONICS)
- MATHEMATICAL MODELS
- MATHEMATICAL PREDICTION
- GAIN
- CAPACITANCE
- ELECTRIC CURRENT
- VOLTAGE
- SILICON
- EXPERIMENTAL DATA
- JET BOMBERS
- PULSE GENERATORS
- THYRATRONS
- HYDROGEN
- DELAY LINES
- PULSE DURATION MODULATION
- POWER
- ENERGY
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics