Accession Number:

AD0912133

Title:

LOC GaAlAs Laser Development.

Descriptive Note:

Final rept. 17 Apr-31 Dec 72,

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP

Report Date:

1973-07-01

Pagination or Media Count:

34.0

Abstract:

LOC lasers for the wavelength of 8800 were fabricated by GA sub 1-xAl sub x As. solution epitaxy. The emission beam angle was varied between 21 and 80 degrees by varying the optical index changes at the n-side cavity boundary. Output power data are presented for the temperature range of 25 to 70 C. External slope efficiencies in excess of 1 wattA, and optical power densities greater than 4 wattmil of facet width, were observed at room temperature. Author

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE