LOC GaAlAs Laser Development.
Final rept. 17 Apr-31 Dec 72,
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP
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LOC lasers for the wavelength of 8800 were fabricated by GA sub 1-xAl sub x As. solution epitaxy. The emission beam angle was varied between 21 and 80 degrees by varying the optical index changes at the n-side cavity boundary. Output power data are presented for the temperature range of 25 to 70 C. External slope efficiencies in excess of 1 wattA, and optical power densities greater than 4 wattmil of facet width, were observed at room temperature. Author
- Lasers and Masers