Studies of Silver Interlayer Photocathodes at 1.06 Microns.
Quarterly technical rept. no. 4, Aug-Oct 72,
HUGHES RESEARCH LABS MALIBU CA
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The initial objective of this program is the demonstration of an improvement of quantum efficiency at 1.06 micrometers for a semitransparent SiCs2O photocathode through the introduction of an Ag interlayer at the SiCs2O interface. An additional program element was added with the completion of negotiations for the development and delivery of a prototype III-V photocathode reflectronic image intensifier. In this quarter an improvement in photocathode quantum efficiency at 1.06 micrometers was demonstrated with the introduction of an Ag interlayer at a SiCs-O interface. Also, a Rutherford backscattering analysis of Ge ion implanted Si corroborates the results of earlier LEED studies indicative of SIGe alloy formation. In addition, a modified GaAs expitaxial growth system has produced 130 micrometers thick epilayers which have been activated to 1000 microangstromslumen sensitivity. A prototype version of the reflectronic image intensifier configuration was used to demonstrate an axial resolution of 50 lppm.
- Electrooptical and Optoelectronic Devices