Accession Number:

AD0909772

Title:

10.6 Micron Photodetector.

Descriptive Note:

Final rept. 25 Nov 70-28 Feb 73,

Corporate Author:

ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER

Personal Author(s):

• Longo, Joseph T.
• Andrews, A. Michael

Report Date:

1973-04-01

Pagination or Media Count:

124.0

Abstract:

The report is on PbSnTe homo- and heterojunction photodiodes which are sensitive to the 8-14 microns portion of the IR spectrum and operable above 77 K. The results cover three main areas 1 Single element 10.6 microns photodiodes with frequency response in excess of 1 GHz for laser radar and communication systems 2 Low frequency-high D arrays 3 Dielectric constant measurements in the depletion region of p-n diodes to determine the upper limit on the frequency response of PbSnTe detectors.

Descriptors:

• *PHOTODIODES)
• (*INFRARED DETECTORS
• SEMICONDUCTORS
• LEAD ALLOYS
• TIN ALLOYS
• TELLURIDES
• GAS LASERS
• OPTICAL RADAR
• DOPPLER SYSTEMS
• OPTICAL COMMUNICATIONS
• INFRARED LASERS
• ILLUMINATION

Subject Categories:

• Electrical and Electronic Equipment
• Infrared Detection and Detectors
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE