Accession Number:

AD0903975

Title:

Theoretical and Experimental Study of Use of Junction FET Digital Integrated Circuits in Radiation Environments.

Descriptive Note:

Final rept. 1 Apr 69-30 Jun 71,

Corporate Author:

FAIRCHILD CAMERA AND INSTRUMENT CORP PALO ALTO CA FAIRCHILD RESEARCH AND DEVE LOPMENT

Report Date:

1972-07-03

Pagination or Media Count:

122.0

Abstract:

The purpose of this contract was to investigate in detail the feasibility of using digital junction FET integrated circuits in radiation environments. Fabrication processes for making junction FET integrated circuits were developed and characterized. Two types of inverting logic gates were designed and fabricated and these circuits operated successfully after irradiation with 10 to the 15th power nsqcm and 10 to the 9th power rads of low energy electrons. The pulsed ionizing radiation failure level for flip-flop circuits was 10 to the 8th power radssecond on 10 MeV electrons. JFET circuits have shown improvements compared to available transistor-transistor logic circuits in neutron irradiation resistance and low energy electron irradiation resistance. However, the circuits studied were slower than TTL circuits -- 40-60 ns gate delays compared to 5-15 ns gate delays for TTL and resistance to pulsed ionizing irradiation was lower. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE