High-Power TRAPATT Devices.
Final rept. 6 Dec 71-5 Jun 72,
RCA LABS PRINCETON NJ
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The significance of this research and development to the Air Force is that the use of TRAPATT diodes for reproducibly generating large UHF powers efficiently was demonstrated. The program goals of 200 W and 20 efficiency at 500 or - 100 MHz were far surpassed. So too was the requirement to generate such oscillations in a circuit of no larger than 3 to 4 cu. inch and weighing no more than 4 oz. A novel circuit using lumped elements was developed. The oscillator size and weight are 1.7 cu cm and 2 oz., respectively. Output power levels of 300 - 400 W with efficiencies of up to 40 were generated. If high spectral purity is desired, some power and efficiency must be sacrificed. Circuit tunability over a wide frequency range centered around 500 MHz was demonstrated. A procedure was developed for fabricating high-voltage 185 to 200 V, large-area 0.0055 sq cm, high-current-capacity 8 A diodes capable of delivering the above-quoted powers at high repetition rates 10 kHz. Finally, a coupled-bar microstrip circuit, apparently capable of also meeting the contract requirements, was developed. Author
- Electrical and Electronic Equipment