Epitaxial Growth and Characterization of GaAs on Spinel.
Final rept. 1 May 70-30 Apr 72,
RCA LABS PRINCETON NJ
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Research on the epitaxial growth and characterization of GaAs on magnesium aluminate spinel was carried out. Single crystal GaAs films with electron and hole mobilities up to 4000 and 300 sq cmV-sec, respectively, were successfully grown on spinel substrate using both vapor phase and liquid phase epitaxial techniques. The effects of growth conditions on the layer characteristics were studied in order to achieve optimization of the film properties. The epitaxial GaAs-spinel composities were characterized by x-ray diffraction, electron diffraction, electron microscopy, and optical techniques. Information on the crystalline perfection, epitaxial orientation relationships, surface structures, and optical constants was obtained. The growth of GaP, GaAsxP1-x, and InxGa1-xAs was also explored with encouraging results. Hetero-epitaxial In-doped thin GaAs degenerate films were successfully grown on various substrates the composites are of potential importance for negative electron affinity devices. The growth of GaAs and GaP of improved quality was achieved by a two-stage epitaxial process, and electro-luminescent GaAsspinel and GaPspinel diodes were successfully fabricated for the first time. Studies were made of the properties of surface acoustic waves on the heteroepitaxial GaAs, and the results indicate that the surface coupling loss and propagation loss are comparable to that measured on bulk material. An n-n-n transferred electron oscillator was successfully fabricated in GaAs-on-spinel, and preliminary results indicate that the material system is of potential application for microwave devices. Author