GaAs on Beryllia Substrates for Application to Microwave Generation.
Final engineering rept. 1 Apr 71-31 Mar 72,
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS
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The second phase of a materials research program to develop techniques for the growth of device-quality thin-film heteroepitaxial GaAs on single-crystal BeO substrates for use in microwave generators, such as Gunn-effect devices, is described. The primary objectives are 1 optimization of the structural and electrical properties of GaAsBeO films so that they will be suitable for use in preparing good quality microwave devices, and 2 exploratory fabrication of such devices. The program involves chemical vapor deposition of GaAs by the metalorganic-hydride process employing trimethylgallium and arsine.
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- Solid State Physics