Accession Number:
AD0901302
Title:
GaAs on Beryllia Substrates for Application to Microwave Generation.
Descriptive Note:
Final engineering rept. 1 Apr 71-31 Mar 72,
Corporate Author:
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS
Personal Author(s):
Report Date:
1972-03-01
Pagination or Media Count:
69.0
Abstract:
The second phase of a materials research program to develop techniques for the growth of device-quality thin-film heteroepitaxial GaAs on single-crystal BeO substrates for use in microwave generators, such as Gunn-effect devices, is described. The primary objectives are 1 optimization of the structural and electrical properties of GaAsBeO films so that they will be suitable for use in preparing good quality microwave devices, and 2 exploratory fabrication of such devices. The program involves chemical vapor deposition of GaAs by the metalorganic-hydride process employing trimethylgallium and arsine.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics