Accession Number:

AD0901302

Title:

GaAs on Beryllia Substrates for Application to Microwave Generation.

Descriptive Note:

Final engineering rept. 1 Apr 71-31 Mar 72,

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS

Report Date:

1972-03-01

Pagination or Media Count:

69.0

Abstract:

The second phase of a materials research program to develop techniques for the growth of device-quality thin-film heteroepitaxial GaAs on single-crystal BeO substrates for use in microwave generators, such as Gunn-effect devices, is described. The primary objectives are 1 optimization of the structural and electrical properties of GaAsBeO films so that they will be suitable for use in preparing good quality microwave devices, and 2 exploratory fabrication of such devices. The program involves chemical vapor deposition of GaAs by the metalorganic-hydride process employing trimethylgallium and arsine.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE