Accession Number:

AD0893266

Title:

Development of Silicon Monolithic Surface Wave Arrays.

Descriptive Note:

Final rept. 1 Jul-31 Dec 71,

Corporate Author:

SOUTHERN METHODIST UNIV DALLAS TX ELECTRONIC SCIENCES CENTER

Personal Author(s):

Report Date:

1972-03-01

Pagination or Media Count:

49.0

Abstract:

The objective of this research is to fabricate silicon device structures capable of generating acoustic surface waves. Realization of this objective would result in silicon programmable surface-wave arrays which would be fully compatible with MOSLSI technology. The performance and cost effectiveness of MOSLSI applied to these electronic functions could have a major impact on radar and communication system technology. Silicon is a piezoresistive material, and this property has previously been utilized in MOSFET surface-wave detection. Since silicon is not piezoelectric, this investigation has employed stress generation in pulsed, reverse-biased p-n junctions and voltage activated MOS capacitor structures for the purpose of surface-wave generation. The surface disturbances produced by these active structures are intended to excite acoustic waves along the silicon surface. Extensive experiments with p-n junctions and MOS structures reported herein unfortunately have failed to produce surface-wave excitation. A discussion of the negative result is given and suggestions for alternate methods of implementing programmable monolithic surface-wave arrays are proposed. Author

Subject Categories:

  • Line, Surface and Bulk Acoustic Wave Devices
  • Acoustics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE