Lumped Parameter Modeling of Integrated Circuits.
Technical rept. Nov 69-Aug 70,
NORTHROP CORPORATE LABS HAWTHORNE CA
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Mathematical models have been developed to represent the electrical performance and radiation-induced transient response of linear and digital microcircuits. Study has included the characterization of the uA709 operational amplifier in terms of its detailed circuit operation, and in terms of a simplified radiation-inclusive admittance model. Accuracy and computational efficiency of the system-component model are demonstrated by successful simulation of the amplifier gain as a function of frequency and ionizing-radiation-induced transient response each as a function of external amplifier parameters. Analysis of the MC507 TTL NAND gate, as the digital network, was based on the derivation of both the detailed microcircuit model and an original form for a terminal radiation-inclusive model. Parameters for the gate models were determined from key electrical performance and radiation-induced transient measurements. Accuracy and computability of the system-component model were demonstrated by successful simulation of the gate d-c characteristics, electrical switching response, and radiation-induced transient response of both the ON and OFF states. A factor-of-five improvement in required computer time and storage requirements was obtained with the use of the system-component model, with no significant loss in the representation of key performance parameters or radiation-induced vulnerability. Author
- Electrical and Electronic Equipment
- Radioactivity, Radioactive Wastes and Fission Products