Accession Number:

AD0884632

Title:

Feasibility Study for Simulation of Secondary Gamma Effects on Semiconductors with Infrared Irradiation.

Descriptive Note:

Interim rept.,

Corporate Author:

BROWN ENGINEERING CO INC HUNTSVILLE AL RESEARCH LABS

Personal Author(s):

Report Date:

1968-10-01

Pagination or Media Count:

25.0

Abstract:

This report assesses the feasibility of using near-infrared irradiation to simulate the effect of the nuclear explosion secondary gamma environment on semiconductors. The purpose is to develop a method of testing nuclear hardness of ballistic missile electronics in the secondary gamma environment which does not depend on the usual nuclear radiation exposure. It is found that infrared photons and gamma rays from the nuclear detonation have approximately equivalent effects on silicon semiconductors. The feasibility of further work to develop a suitable infrared source and techniques for device and circuit irradiation is indicated. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Guided Missiles
  • Radioactivity, Radioactive Wastes and Fission Products

Distribution Statement:

APPROVED FOR PUBLIC RELEASE