1.06 Micron Image Converter.
Final technical rept. 2 Jan 70-28 Feb 71,
RCA ELECTRONIC COMPONENTS PRINCETON NJ ELECTRO-OPTICS LAB
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A materials research program on the growth of Ga1-xInxAs alloy layers in which a number of factors that directly affect 1.06 micrometer photoresponse was carried out. Improvements in growth and activation conditions resulted in substantial improvements in 1.06 micrometer response, the highest sensitivity being 2. InAs composition between 17 and 21 and doping levels in the 5 x 10 to the 18th powercc range gave optimum results. Studies of the activation procedure showed that the Cs -O on the surface of these ternary alloy cathodes is about a monolayer thick. A determination was made of the surface escape probability vs band gap. Several transmission-type cathodes were tested and the best transmission 1.06 micrometer sensitivity was 1.25. An external processing system was developed for the manufacture of image tubes utilizing these cathodes. Author
- Electrooptical and Optoelectronic Devices
- Solid State Physics