In-Process Control Techniques for Complex Semiconductor Structures. Task II. The Application of Secondary Electron Spectroscopy (Auger Electron Analysis) to Surface Control Program in the Manufacturing of Silicon Devices.
Final technical rept. 1 May 68-31 Aug 70,
GENERAL ELECTRIC CO SYRACUSE NY SEMICONDUCTOR PRODUCTS DEPT
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The project developed, established and demonstrated the use of secondary electron spectroscopy Auger electron analysis as an effective in-process control technique for controlling surfaces in the manufacture of silicon semiconductor devices. The program was divided into three main phases. In the initial phase, comparisons were made of Si, Si02 and Si3N4 to note the effects of variations in the chemical bonding. Effects due to the primary electron beam of the equipment were examined, the reproducibility of measurements was studied and the equipment was used to detect alkali metals in oxide layers. The major effort in the second phase was an examination of the cleaning steps in wafer processing that were critical to subsequent operations such as epitaxial deposition, diffusion or metalization. In the third, demonstration phase, the equipment was incorporated in a production environment and was used to identify and improve yields associated with the epitaxial growth of silicon. It was also possible to define and improve wafer handling and cleaning procedures prior to high temperature processing. The equipment was proved to be an excellent diagnostic tool for identifying trouble spots in silicon device manufacturing processes. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Test Facilities, Equipment and Methods