Silicon-on-Sapphire Transistor Development.
Final rept. 10 Nov 69-9 Nov 70,
RCA LABS PRINCETON NJ
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The report discusses further advances made in the silicon-on-insulator system resulting from the use of improved materials and from the use of improved thin-film processing techniques. The work was concentrated on achieving higher speed transistors by Improving the starting silicon Developing and optimizing new processing techniques needed for high-speed transitor fabrication and Making both low- and high-frequency measurements on finished devices to determine their high-frequency capabilities. Author
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems